Author Affiliations
Abstract
1 State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2 Frontier institute of Chip and System, Fudan University, Shanghai 200433, China
3 College of Electronic Science and Technology, National University of Defense Technology, Changsha 410073, China
4 University of Chinese Academy of Sciences, Beijing 100049, China
The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics. In this work, TiN/Hf0.5Zr0.5O2/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature (300 K) to cryogenic temperature (30 K). We observe a consistent decrease in permittivity (εr) and a progressive increase in coercive electric field (Ec) as temperatures decrease. Our investigation reveals exceptional stability in the double remnant polarization (2Pr) of our ferroelectric thin films across a wide temperature range. Specifically, at 30 K, a 2Pr of 36 μC/cm2 under an applied electric field of 3.0 MV/cm is achieved. Moreover, we observed a reduced fatigue effect at 30 K in comparison to 300 K. The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO2 based ferroelectric thin films for cryo-electronics applications.
hafnia-zirconia solid solution ferroelectricity cryogenic temperature wake-up effect Journal of Semiconductors
2024, 45(3): 032301
1 电子科技大学 电子科学与工程学院
2 先进毫米波技术集成攻关研究院
3 电子科技大学 先进毫米波技术集成攻关研究院
4 信息与通信工程学院, 四川成都 611731
与广泛应用的以微波为代表的无线系统和以光纤为代表的有线系统相比, 太赫兹除了其特殊的频谱特性外, 人们期待太赫兹频段用于无线系统能突破微波系统的带宽限制, 实现可与光纤系统相媲美的大带宽, 并具有无线系统的灵活性和智能化。但如何实现宽带、智能以及具有较远作用距离的太赫兹系统, 面临极大的挑战性。本文介绍了光电融合智能太赫兹的体系架构, 重点讨论了基于光电融合的太赫兹源、接收检测、阵列天线以及太赫兹光电混频器等关键技术的国内外研究进展与进一步发展方向, 以期解决单纯的电子学方式或光子学方式存在的难以克服的瓶颈限制。
太赫兹 光电融合 超宽带通信 体系架构 terahertz photonic-electronicconvergence ultrawidebandcommunications system architecture 太赫兹科学与电子信息学报
2023, 21(4): 482
1 华中科技大学智能制造装备与技术全国重点实验室，湖北 武汉 430074
2 湖北光谷实验室，湖北 武汉 430074
光刻热点检测是实现集成电路可制造性设计，保障集成电路芯片最终良率的关键。鉴于传统基于深度学习的光刻热点检测方法难以满足先进集成电路制造对检测精度的要求，提出了一种基于改进Yolov5s的检测算法，用于光刻版图热点缺陷的精确检测。通过将坐标注意力机制引入骨干网络，提高了Yolov5s模型对版图图形区域的关注度，进而极大地改善了基于Yolov5s的检测算法的光刻热点检测性能。与此同时，采用Sigmoid线性单元激活函数进一步完善整个神经网络的非线性表达，利用Scylla交并比损失函数更快速地定量评估边界框回归损失，提高了热点检测算法的收敛速度和精度。将ICCAD（The International Conference on Computer-Aided Design）2012竞赛基准、经光学邻近校正优化后的光刻图形作为数据集对所提算法开展性能测试实验，验证了热点检测算法的优异检测精度。实验结果表明，该算法的平均准确率、平均召回率、平均F1-score和均值平均精度分别达到97.7%、98.0%、97.8%和98.4%，显著优于其他光刻热点检测算法，展示了良好的应用前景。
光刻热点检测 改进Yolov5s 检测精度 坐标注意力机制 Sigmoid线性单元激活函数 Scylla交并比损失函数 激光与光电子学进展
2023, 60(24): 2422001
1 东北大学冶金学院, 沈阳 110819
2 材料先进制备技术教育部工程研究中心, 沈阳 110819
3 抚顺天成环保科技有限公司, 抚顺 113001
目前, 工业除尘滤袋的工作温度不高于280 ℃, 通常在过滤前需先将高温烟气进行降温处理。为了制备高效且耐温性良好的新型过滤材料, 本文以粉煤灰为主要原料, 以H2O2为发泡剂, 通过聚合反应制备了多孔地聚物, 并对其形貌、孔结构、抗折强度和过滤性能进行了表征。结果表明: H2O2的最佳添加量为0.98％(质量分数), 此时多孔地聚物下表面与内部的平均孔径分别为17.3和171.5 μm, 孔隙率为56.2％, 常温下抗折强度为2.2 MPa, 过滤阻力为6.2×10-3 MPa, 对PM10和PM2.5的过滤效率分别为98.2％和93.3％, 经800 ℃的热处理后, 抗折强度增加到3.4 MPa, 对PM10和PM2.5的过滤效率均保持在90％以上, 过滤阻力增加了1×10-3 MPa。因此, 以粉煤灰基多孔地聚物作为高温烟气过滤材料具有良好的应用前景。
粉煤灰 多孔地聚物 高温处理 过滤性能 孔结构 抗折强度 fly ash porous geopolymer high temperature treatment filtering performance pore structure flexural strength
1 大连理工大学材料科学与工程学院辽宁省激光3D打印装备及应用工程技术研究中心，辽宁 大连 116024
2 大连理工大学机械工程学院，辽宁 大连 116024
3 沈阳鼓风机集团股份有限公司，辽宁 沈阳 110869
为了获得TiC铁基合金粉末在316L不锈钢上的激光熔覆最佳工艺参数，提出了一种基于遗传算法优化的反向传播（BP）神经网络的激光熔覆参数优化方法。设计三因素五水平的全因子试验，测量了熔覆层的宏观形貌和平均硬度，建立输入参数（激光功率、扫描速度、保护气流量）和响应量（熔覆层宽度、熔覆层高度、稀释率、显微硬度）的神经网络模型。以多元非线性回归分析工艺参数对响应量的影响，并以综合灰关联度表征熔覆层的综合性能，寻优得到最佳参数。试验结果表明，激光功率和扫描速度对熔覆层宽度、稀释率和显微硬度的影响明显，而保护气流量对熔覆层高度影响最显著，遗传算法优化的BP神经网络模型各响应量模型的拟合优度均达到0.85~0.91之间，GA-BP模型精度良好，当参数为1090 W，扫描速度为4.4 mm/s，保护气流量为10 L·min-1，综合性能最佳，表明BP神经网络算法适用于激光熔覆层质量控制和参数优化。
激光熔覆 反向传播神经网络 遗传算法 灰关联度 参数优化 激光与光电子学进展
2023, 60(17): 1714001
1 长春理工大学光电工程学院光电测控与光信息传输技术教育部重点实验室，吉林 长春 130022
2 成都太科光电技术有限责任公司，四川 成都 610041
利用二阶泰勒形式表示公差与波像差的函数关系，依据差分光线追迹法，通过光线追迹理论推导完善了偏心和倾斜两种公差关于波像差的一阶导数计算公式，利用依次求导和公式移项两种方法建立波像差的二阶导数模型。结果表明：依次求导法的求解过程复杂，应用范围受到限制，只可用于光学后截距分析；公式移项法所需的追迹像质次数少，且拟合效果良好，残差平方和处于10-7~10-6量级；所提方法可对光学系统进行有效的经济公差分配。
光计算 光学加工 经济公差 波像差 光线追迹 仿真分析 光学学报
2023, 43(13): 1320003
Author Affiliations
Abstract
1 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China
2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China
3 Guangdong Engineering Technology R&D Center of Compound Semiconductors and Devices, Sun Yat-sen University, Guangzhou 510006, China
Heterojunction field-effect phototransistors using two-dimensional electron gas (2DEG) for carrier transport have great potential in photodetection owing to its large internal gain. A vital factor in this device architecture is the depletion and recovery of the 2DEG under darkness and illumination. This is usually achieved by adding an external gate, which not only increases the complexity of the fabrication and the electrical connection but also has difficulty ensuring low dark current (). Herein, a quasi-pseudomorphic AlGaN heterostructure is proposed to realize the self-depletion and photorecovery of the 2DEG, in which both the barrier and the channel layers are compressively strained, making the piezoelectric and spontaneous polarization reverse, thus depleting the 2DEG and tilting the entire barrier and channel band to form two built-in photogates. The fabricated solar-blind phototransistors exhibit a very low below , a superhigh responsivity () of , a record high detectivity () of Jones, and an ultrafast response speed at the nanosecond level. The high performance is attributed to the efficient depletion and recovery of the full 2DEG channel by the two photogates, enabling direct detection of the sub-fW signal. This work provides a simple, effective, and easily integrated architecture for carrier control and supersensitive photodetection based on polarization semiconductors.
Photonics Research
2023, 11(7): 1217
Author Affiliations
Abstract
1 State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China
2 School of Astronautics, Harbin Institute of Technology, Harbin 150001, People’s Republic of China
3 Department of Biomedical Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, People’s Republic of China
The growing demand for electronic devices, smart devices, and the Internet of Things constitutes the primary driving force for marching down the path of decreased critical dimension and increased circuit intricacy of integrated circuits. However, as sub-10 nm high-volume manufacturing is becoming the mainstream, there is greater awareness that defects introduced by original equipment manufacturer components impact yield and manufacturing costs. The identification, positioning, and classification of these defects, including random particles and systematic defects, are becoming more and more challenging at the 10 nm node and beyond. Very recently, the combination of conventional optical defect inspection with emerging techniques such as nanophotonics, optical vortices, computational imaging, quantitative phase imaging, and deep learning is giving the field a new possibility. Hence, it is extremely necessary to make a thorough review for disclosing new perspectives and exciting trends, on the foundation of former great reviews in the field of defect inspection methods. In this article, we give a comprehensive review of the emerging topics in the past decade with a focus on three specific areas: (a) the defect detectability evaluation, (b) the diverse optical inspection systems, and (c) the post-processing algorithms. We hope, this work can be of importance to both new entrants in the field and people who are seeking to use it in interdisciplinary work.
optical defect inspection microscopy nanophotonics integrated circuits deep learning International Journal of Extreme Manufacturing
2022, 4(3): 032001
1 衢州职业技术学院机电工程学院，浙江 衢州 324000
2 浙江红五环机械股份有限公司，浙江 衢州 324000
3 衢州学院浙江省空气动力装备技术重点实验室，浙江 衢州 324000
为提高TC4钛合金表面的综合性能，采用Fe35A合金为熔覆粉末在TC4钛合金材料表面进行激光熔覆加工试验，综合制备出耐磨复合涂层，并采用数字化测试设备研究分析其洛氏硬度、宏观形貌、几何形状等综合性能。试验结果表明：在工艺参数设置为激光功率2 300 W、扫描速度9 mm/s、送粉速率10 g/min的最佳熔覆参数下制备而成的熔覆层质量最佳，宏观形貌规整饱满，表面洛氏硬度值高达40.2 HRC，熔覆层表面均匀细致，实现了TC4钛合金表面高质量熔覆Fe35A合金涂层的效果。
TC4钛合金 Fe35A涂层 工艺参数 宏观形貌 几何尺寸 洛氏硬度 TC4 alloy Fe35A coating process parameter macroscopic morphology geometry Rockwell hardness
Author Affiliations
Abstract
1 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China
2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China
3 Guangdong Engineering Technology R & D Center of Compound Semiconductors and Devices, Sun Yat-sen University, Guangzhou 510006, China
High sensitivity, high solar rejection ratio, and fast response are essential characteristics for most practical applications of solar-blind ultraviolet (UV) detectors. These features, however, usually require a complex device structure, complicated process, and high operating voltage. Herein, a simply structured n-AlGaN/AlN phototransistor with a self-depleted full channel is reported. The self-depletion of the highly conductive n-AlGaN channel is achieved by exploiting the strong polarization-induced electric field therein to act as a virtual photogate. The resulting two-terminal detectors with interdigital Ohmic electrodes exhibit an ultrahigh gain of , an ultrafast response speed with rise/decay times of 537.5 ps/3.1 μs, and an ultrahigh Johnson and shot noise (flicker noise) limited specific detectivity of () Jones at 20-V bias. Also, a very low dark current of the order of and a photo-to-dark current ratio of above are obtained, due to the complete depletion of the channel layer and the high optical gain. The proposed planar phototransistor combines fabrication simplicity and performance advantages, and thus is promising in a variety of UV detection applications.
Photonics Research
2022, 10(9): 2229
